Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076

文件：189 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon PNP Epitaxial Type

FEATURES ● Excellent hFE linearity. ● Low collector saturation voltage. ● High power dissipation. APPLICATIONS ● Strobe Flash Applications. ● Medium Power Amplifier Applications.

文件：239.48 Kbytes 页数：5 Pages

BILIN

银河微电

isc Silicon PNP Power Transistor

DESCRIPTION • hFE=100-320(IC= -0.5A; VCE= -2V) • hFE=70(Min)(IC= -4A; VCE= -2V) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) •·High Power Dissipation- : PC= 10W@TC=25℃ ,PC= 10W@Ta=25℃ • Minimum Lot-to-Lot variations for robust device performance and

文件：266.67 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati

文件：324.64 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati

文件：305.59 Kbytes 页数：3 Pages

ISC

无锡固电

TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low collector saturation voltage : VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) • High pow

文件：150.32 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Strobe Flash Applications Medium Power Amplifier Applications ● Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) ● Low Collector Saturation Voltage : VCE (sat) = −1.0 V (max) (IC = −

文件：267.99 Kbytes 页数：2 Pages

JIANGSU

长电科技

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Excellent hFE linearity, low VCE(sat), high PC. Applications Strobe flash applications, medium power amplifier applications.

文件：1.34629 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati

文件：324.64 Kbytes 页数：3 Pages

ISC

无锡固电