Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati

文件：305.59 Kbytes 页数：3 Pages

ISC

无锡固电

POWER AMPLIFIER APPLICATIONS.

Features -Good Linearity of hFE -Complementary to 2SC3073

文件：209.73 Kbytes 页数：3 Pages

TOSHIBA

东芝

丝印：IPAK；Package：TO-251；isc Silicon PNP Power Transistorisc

DESCRIPTION • With TO-251(IPAK) packaging • High speed switching time • Low collector saturation voltage • Complement to type 2SC3074 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Medium power dissipation

文件：297.16 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：A1244；Package：SC-65；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

文件：195.86 Kbytes 页数：4 Pages

TOSHIBA

东芝

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

文件：172.91 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

文件：172.91 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

文件：172.98 Kbytes 页数：5 Pages

TOSHIBA

东芝

TRANSISTOR (HIGH FREQUENCY AMPLIFIER AND SWITCHING, VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications

文件：208.59 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon Pnp Epitaxial Planar Type

Silicon Pnp Epitaxial Planar Type

文件：35.24 Kbytes 页数：1 Pages

KEXIN

科信电子