2SA1015-L-HF

PNPTransistors

2SA1015L-Y

AudioFrequencyGeneralPurposeAmplifierApplicationsDriverStageAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA

2SA1015M

SiliconPNPtransistorinaSOT-23PlasticPackage

2SA1015-O

PNPSiliconPlastic-EncapsulateTransistor

2SA1015-O

PNPSiliconPlastic-EncapsulateTransistor

Features •Capableof0.4WattsofPowerDissipation. •Collector-current:-0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+125°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:A1015 •LeadFreeFinish/R

2SA1015-O

PNPSiliconPlastic-EncapsulateTransistor

2SA1015T-G

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor

2SA1015T-L

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor

2SA1015T-O

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor

2SA1015T-Y

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor