2SA1020-Y

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

PowerAmplifierApplications PowerSwitchingApplications •LowCollectorsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SC2655

2SA1020-Y-AB3-B

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-AB3-K

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-AB3-R

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-T9N-B

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-T9N-K

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y-T9N-R

SILICON PNP EPITAXIAL TRANSISTOR

2SA1020-Y(F,M)

Package：TO-226-3，TO-92-3 长体；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SA1020-Y(HIT,F,M)

Package：TO-226-3，TO-92-3 长体；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SA1020-Y(ND1,AF)

Package：TO-226-3，TO-92-3 长体；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage