2SA1015-GR

PNP Silicon Plastic-Encapsulate Transistor

Features •Capableof0.4WattsofPowerDissipation. •Collector-current:-0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+125°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:A1015 •LeadFreeFinish/R

2SA1015-GR

PNP Silicon Plastic-Encapsulate Transistor

2SA1015-GR

PNP Silicon Plastic-Encapsulate Transistor

2SA1015-GR-AP

包装：散装 封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A TO92

2SA1015-GR-BP

包装：散装 封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A TO92

2SA1015

PNPSILICONTRANSISTOR

2SA1015isPNPsiliconplanartransistordesignedforaudiofrequencygeneralpurposeamplifierapplicationsanddriverstageamplifierapplications.

2SA1015

AudioFrequencyAmplifierApplicationsLowNoiseAmplifierApplications

2SA1015

PNPTransistor

Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz

2SA1015

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

2SA1015

LOWFREQUENCYPNPAMPLIFIERTRANSISTOR

2SA1015

PNPEPITAXIALPLANARTRANSISTOR

Description The2SA1015isdesignedforuseindriverstageofAFamplifierandgeneralpurposeamplification.

2SA1015

AudioFrequencyGeneralPurposeAmplifierApplicationsDriverStageAmplifierApplications

2SA1015

PNPEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIER,DRIVERSTAGEAMPLIFIER)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA

2SA1015

AudioFrequencyGeneralPurposeAmplifierApplicationsDriverStageAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA

2SA1015

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) ●Powerdissipation

2SA1015

PNPEpitaxialPlanarTransistor

PNPEpitaxialPlanarTransistor

2SA1015

SiliconEpitaxialPlanarTransistor

FEATURES ●ComplementaryTo2SC1815. ●ExcellentHFELinearity. ●Highvoltageandhighcurrent. ●Lownoise. ●Collector-EmittervoltageBVCEO=-50V. APPLICATIONS ●Lowfrequency,lownoiseamplifier.

2SA1015

PNPTransistors

Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz

2SA1015

Highvoltageandhighcurrent

FEATURES Highvoltageandhighcurrent ExcellenthFELinearity Lowniose,ComplementarytoC1815

2SA1015

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Powerdissipation