2N7002T.

N-Channel60V(D-S)MOSFET

2N7002TB

60VN-CHANNELENHANCEMENTMODEMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@50mA=7.5Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Relays,Displays,Lamps,Solenoids,Memories,

2N7002T-C

N-ChannelPlastic-EncapsulateMOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002TE

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.29A ●RDS(ON)

2N7002T-HF

MOSFET

Features -HighdensitycelldesignforlowRDS(ON) -Voltagecontrolledsmallsignalswitch -Ruggedandreliable -Highsaturationcurrentcapability

2N7002-TP

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF· •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •AdvancedTrenchProcessTechnology •HighInputImpedance •HighSpeedSwitching •CMOSLogicCompatibleInput •Marking:7002/S72 ··