2N7002KT

N-ChannelEnhancementMOSFET

2N7002KT

SOT-523Plastic-EncapsulateMosfets

2N7002KT

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV

2N7002KTB

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

2N7002KTB

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

2N7002KU

60VN-ChannelMOSFET

Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva

2N7002KU

AdvancedMOSFETprocesstechnology

2N7002KU

NChannelMOSFET

2N7002KU

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V.(HumanBodyModel) •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU

2N7002KV

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest