首页 >2N7002K-NL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedUpTo2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002KQissuitableforautomotiveapplications requirings | DIODES Diodes Incorporated | DIODES | ||
60VN-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallDFN1110D-3 (SOT8015)leadlessSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •Logic-levelcompatible •Sidewettableflanksforoptical | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-ChannelENHANCEMENTMODEPOWERMOSFET FEATURES: *Gate-SourceESDProtected:1500V *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchi | WEITRON Weitron Technology | WEITRON | ||
ChannelEnhancementMOSFET FEATURES •LowGateChargeforFastSwitching. •ESDProtectedGate. APPLICATIONS •PowerManagementLoadSwitch •ESDProtected:1500V •Easilydesigneddrivecircuits | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelEnhancementMOSFET | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
SOT-523Plastic-EncapsulateMosfets | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT |
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