2N7002K

N-ChannelMOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2KV(HBM) •Marking:72K •Halogenfreeavailableuponrequestbyaddingsuff

2N7002K

N-ChannelEnhancementModeFieldEffectTransistor

2N7002K

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

2N7002K

SmallSignalMOSFET60V,380mA,Single,N?묬hannel,SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

2N7002K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002K

N-ChannelEnhancementModePowerMOSFET

2N7002K

300mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7002KusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. „FEATURES *LowReverseTransferCapacitance(CRSS=typical3.0pF) *ESDProt

2N7002K

N-Channel60-V(D-S)MOSFET

2N7002K

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

2N7002K

N-Channel60-V(D-S)MOSFET