2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002E

SmallSignalMOSFET60V,310mA,Single,N?묬hannel,SOT??3

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoH

2N7002E

N-CHANNELENHANCEMENT-MODEMOSFET

Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage

2N7002E

SmallSignalMOSFET

2N7002E

SuperhighdensecelldesignforlowRDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

2N7002E

N-CHANNELENHANCEMENT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR •LowOn-Resistance •FastSwitchingSpeed •Low-voltagedrive •Easilydesigneddrivecircuits •Pb-FreePackageisavailable. •Canprotectagainststaticelectricity1KVwhen theproductisinuse. •AEC-Q101Pass

2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

2N7002E

N-Channel60V(D-S)MOSFET

2N7002E

SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

2N7002EPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere CONSTRUCTION *N-ChannelEnhancement MARKING *702E FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability.