High Voltage PNP Bipolar Junction Transistor

The High Voltage PNP Bipolar Junction Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications. • High blocking voltage,VCE0 =350 V\n• High voltage\n• Pb-Free Package;

ONSEMI

安森美半导体

PNP Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517

文件：162.16 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 350V 0.5A TO92-3

ONSEMI

安森美半导体

PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N6520 is complementary to H2N6517

文件：36.83 Kbytes 页数：3 Pages

HSMC

华昕

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.

文件：130.699 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体