COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

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Central

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA

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DIODES

美台半导体

High Voltage Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Through Hole Package • 150 °C Junction Temperature • Voltage and Current are negative for PNP trans

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MCC

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：129.449 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High voltage. Applications High voltage control circuit application.

文件：961.01 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Complement to 2N6517

文件：103.79 Kbytes 页数：1 Pages

FS

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：118.01 Kbytes 页数：1 Pages

TEL

High Voltage Transistor 625mW

文件：295.96 Kbytes 页数：7 Pages

MCC

High Voltage Transistor 625mW

文件：341.17 Kbytes 页数：7 Pages

MCC

High Voltage Transistors

文件：101.59 Kbytes 页数：8 Pages

ONSEMI

安森美半导体