isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 5A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

文件：143.36 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

文件：109.64 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：111.22 Kbytes 页数：3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.51 Kbytes 页数：1 Pages

SEME-LAB

Package：TO-204AA，TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

Microchip

微芯科技