POWER TRANSISTORS(25A,200W)

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB

文件：191.65 Kbytes 页数：4 Pages

MOSPEC

统懋

POWER TRANSISTORS(25A,200W)

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB

文件：191.65 Kbytes 页数：4 Pages

MOSPEC

统懋

isc Silicon PNP Power Transistor

FEATURES ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -10A DESCRIPTION ·Designed for use in power amplifier and switching circuits applications.

文件：267.28 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

文件：131.86 Kbytes 页数：3 Pages

ISC

无锡固电

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto2N

文件：86.43 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

文件：113.6 Kbytes 页数：3 Pages

SAVANTIC

POWER TRANSISTORS PNP SILICON

High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6437 = 120 Vdc (Min) — 2N6438 • High DC Current Gain — hFE = 20–80 @IC = 10 Adc = 12 (

文件：131.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto

文件：198.54 Kbytes 页数：4 Pages

BOCA

博卡

HIGH POWER PNP SILICON TRANSISTORS

DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications

文件：41.79 Kbytes 页数：2 Pages

SEME-LAB

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability • All Gold Metalization

文件：27.34 Kbytes 页数：1 Pages

ASI