Silicon NPN Power Transistors

文件：116.96 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：160.67 Kbytes 页数：3 Pages

JMNIC

锦美电子

High-Power NPN Silicon Transistors

文件：66.78 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

25 A，100 V，NPN 双极功率晶体管

The Power 25A 150 VBipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining VoltageVCEO(sus) = 100 V\n• High DC Current GainhFE = 30 - 120 @ IC = 10 AdchFE = 12 (Min) @ IC = 25 Adc\n• Low Collector-Emitter Saturation VoltageVCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc\n• Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf ;

ONSEMI

安森美半导体

NPN Silicon Power 100V to 150V, 25A

This specification covers the performance requirements for NPN silicon power, 2N6338 and 2N6341 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/509. The device package for this specification sheet is

Microchip

微芯科技

Package：TO-204AA，TO-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 25A TO204

ONSEMI

安森美半导体

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：NPN TRANSISTOR

MICROCHIP

微芯科技

High-Power NPN Silicon Transistors

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

文件：135.54 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件：160.67 Kbytes 页数：3 Pages

JMNIC

锦美电子

Package：TO-204AA，TO-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 25A TO204

ONSEMI

安森美半导体