COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

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SEME-LAB

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PNP POWER TRANSISTOR SILICON AMP

Microchip

微芯科技