POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

文件：185.32 Kbytes 页数：4 Pages

MOSPEC

统懋

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain-hFE=15~60@IC = -25A • Low Saturation VoltageVCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS • Designed for use in high power amplifer and switching circuits applications.

文件：144.37 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistors

DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers

文件：246.46 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

文件：206.3 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466

文件：65.23 Kbytes 页数：2 Pages

MICROSEMI

美高森美

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

文件：133.86 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High?묬urrent Complementary Silicon Power Transistors

文件：151.67 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

PNP Silicon Power -60V to -80V, 50A

This specification covers the performance requirements for PNP, silicon, power, 2N5683 and 2N5684 transistors, complimentary to 2N5686 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/466. The device package outlines ar

Microchip

微芯科技

50 A, 80 V PNP Bipolar Power Transistor

The Power 50A 80 VBipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications. • High Current Capability - IC Continuous = 50 Amperes.\n• DC Current Gain - hFE = 15-60 @ IC = 25 Adc\n• Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体