2N5660中文资料NPN Silicon Power 200V to 300V, 5A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454. The device packages for the encapsulated device types are as follows: (2N5660 and 2N5661) (similar to TO-66). The device packages for the encapsulated device types are as follows: (2N5662 and 2N5663) (similar to TO-5). The surfacemount device packages for the encapsulated device types are as follows: (2N5660U3, and 2N5661U3) in accordance with SMD 0.5 (U3).

简介

2N5660属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N5660晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。