EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V • Low Leakage Current. : ICBO=50nA(Max.), VCB=120V • Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA • Low Noise : NF=8dB (Max.)

文件：164.94 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

TO-92 PACKAGE

文件：30.23 Kbytes 页数：1 Pages

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KEC(Korea Electronics)

GENERAL PURPOSE TRANSISTORS

文件：707.49 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

NPN Silicon Transistor

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.)

文件：252.17 Kbytes 页数：4 Pages

AUK

HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A

FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS APPLICATIONS: Hermetically sealed surface mount 2N5551 for high reliability / space applications requiring small size and low weight devices.

文件：40.33 Kbytes 页数：2 Pages

SEME-LAB

TO-92 PACKAGE

文件：30.23 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：37.94 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, TO-92, 160V, 0.6A

• High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V \n• Low saturation Voltage : VCE(sat)=0.2V(max.) \n• Low Noise : NF=8dB (max.);

KEC

NPN Silicon Transistor

Kodenshi-AUK

Bipolar Junction Transistors

TT Electronics