2N5551C

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=180V,VCEO=160V •LowLeakageCurrent. :ICBO=50nA(Max.),VCB=120V •LowSaturationVoltage :VCE(sat)=0.2V(Max.),IC=50mA,IB=5mA •LowNoise:NF=8dB(Max.)

2N5551C

TO-92 PACKAGE

2N5551C

GENERAL PURPOSE TRANSISTORS

2N5551C

General Purpose Transistor, TO-92, 160V, 0.6A; • High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V \n• Low Leakage Current : ICBO=50nA(max.) \n• Low saturation Voltage : VCE(sat)=0.2V(max.) \n• Low Noise : NF=8dB (max.);

2N5551CN

NPN Silicon Transistor

Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(MAX.)

2N5551CSM

HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A

FEATURES •SILICONPLANAREPITAXIALNPNTRANSISTOR •HERMETICCERAMICSURFACEMOUNTPACKAGE(SOT23COMPATIBLE) •CECCSCREENINGOPTIONS APPLICATIONS: Hermeticallysealedsurfacemount2N5551forhighreliability/spaceapplicationsrequiringsmallsizeandlowweightdevices.

2N5551C_00

TO-92 PACKAGE

2N5551C_15

EPITAXIAL PLANAR NPN TRANSISTOR

2N5551CSM

Bipolar Junction Transistors;

2N5551CBU

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 160V 0.6A TO92-3