EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V • Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : N

文件：147.4 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：39.4 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：39.4 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.\nHIGH VOLTAGE APPLICATION.FEATURES\n• High Collector Breakdwon Voltage\n   : VCBO=-130V, VCEO=-120V\n• Low Leakage Current.\n   : ICBO=-100nA(Max.) @VCB=-100V\n• Low Saturation Voltage\n   : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA\n• Low Noise : NF=8dB (Max.) • High Collector Breakdwon Voltage\n   : VCBO=-130V, VCEO=-120V\n• Low Leakage Current.\n   : ICBO=-100nA(Max.) @VCB=-100V\n• Low Saturation Voltage\n   : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA\n• Low Noise : NF=8dB (Max.);

KEC