POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc

文件：251.85 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(200W)

NPN SILICON HIGH-POWER TRANSISTORS General Purpose use in power amplifier and switching circuit applications.

文件：178.76 Kbytes 页数：4 Pages

MOSPEC

统懋

200 WATT NPN SILICON POWER TRANSISTOR

FEATURES • HFE ---------------------------- 15-60 @ 15 Amps • VCE(sat) ---------------------------- 2.0 V @ 20 Amps • Fast Switching 1 μsec Rise Time • Excellent Safe Operating Area

文件：199.34 Kbytes 页数：2 Pages

SSDI

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

文件：132.76 Kbytes 页数：3 Pages

ISC

无锡固电

a very High Input Impedance N-Channel JFET amplifier

The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise. FEATURES DIRECT REPLACEMENT FOR LF5301 & PF5301 HIGH INPUT IMPENDANCE IG = 0.100 pA HIGH GAIN gf

文件：288.86 Kbytes 页数：1 Pages

MICROSS

HIGH-POWER NPN SILICON TRANSISTORS

20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60-80 Volts 200 Watts

文件：282.67 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

文件：114.7 Kbytes 页数：3 Pages

SAVANTIC

a very High Input Impedance N-Channel JFET amplifier

The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise. FEATURES DIRECT REPLACEMENT FOR LF5301 & PF5301 HIGH INPUT IMPENDANCE IG = 0.100 pA HIGH GAIN gf

文件：288.86 Kbytes 页数：1 Pages

MICROSS

a very High Input Impedance N-Channel JFET amplifier

The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise. FEATURES DIRECT REPLACEMENT FOR LF5301 & PF5301 HIGH INPUT IMPENDANCE IG = 0.100 pA HIGH GAIN gf

文件：288.84 Kbytes 页数：1 Pages

MICROSS