| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2N5301 | POWER TRANSISTORS(200W) NPNSILICONHIGH-POWERTRANSISTORS GeneralPurposeuseinpoweramplifierandswitchingcircuitapplications. | MOSPEC MOSPEC |  | |
2N5301 | 200 WATT NPN SILICON POWER TRANSISTOR FEATURES •HFE----------------------------15-60@15Amps •VCE(sat)----------------------------2.0V@20Amps •FastSwitching1μsecRiseTime •ExcellentSafeOperatingArea | SSDI SSDI |  | |
2N5301 | POWER TRANSISTORS NPN SILICON High-PowerNPNSiliconTransistors ...foruseinpoweramplifierandswitchingcircuitsapplications. •HighCollector–EmitterSustainingVoltage— VCEO(sus)=80Vdc(Min)@IC=200mAdc(2N5303) •LowCollector–EmitterSaturationVoltage— VCE(sat)=0.75Vdc(Max)@IC=10Adc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
2N5301 | Silicon NPN Power Transistors DESCRIPTION •WithTO-3package •Complementtotype2N4398/4399/5745 •Lowcollector/saturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinpoweramplifierandswitchingcircuitsapplications. | SAVANTIC Savantic, Inc. |  | |
2N5301 | Silicon NPN Power Transistors DESCRIPTION •WithTO-3package •Complementtotype2N4398/4399/5745 •Lowcollector/saturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinpoweramplifierandswitchingcircuitsapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2N5301 | Power Transistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
2N5301 | a very High Input Impedance N-Channel JFET amplifier The2N5301isaveryHighInputImpedanceN-ChannelJFETamplifier The2N5301N-channelJFETisdesignedtoprovideperformanceamplificationatlowfrequenciesandwithlownoise. FEATURES DIRECTREPLACEMENTFORLF5301&PF5301 HIGHINPUTIMPENDANCEIG=0.100pA HIGHGAINgf | MICROSS MICROSS |  | |
2N5301 | HIGH-POWER NPN SILICON TRANSISTORS 20AND30AMPEREPOWERTRANSISTORSNPNSILICON40-60-80Volts200Watts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
2N5301 | Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | | |
2N5301 | Bipolar NPN Device in a Hermetically sealed TO3 | SEME-LAB Seme LAB |  | |
2N5301 | 包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：NPN TRANSISTOR | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | |
a very High Input Impedance N-Channel JFET amplifier The2N5301isaveryHighInputImpedanceN-ChannelJFETamplifier The2N5301N-channelJFETisdesignedtoprovideperformanceamplificationatlowfrequenciesandwithlownoise. FEATURES DIRECTREPLACEMENTFORLF5301&PF5301 HIGHINPUTIMPENDANCEIG=0.100pA HIGHGAINgf | MICROSS MICROSS | | ||
a very High Input Impedance N-Channel JFET amplifier The2N5301isaveryHighInputImpedanceN-ChannelJFETamplifier The2N5301N-channelJFETisdesignedtoprovideperformanceamplificationatlowfrequenciesandwithlownoise. FEATURES DIRECTREPLACEMENTFORLF5301&PF5301 HIGHINPUTIMPENDANCEIG=0.100pA HIGHGAINgf | MICROSS MICROSS | | ||
包装：散装 封装/外壳：TO-204AA，TO-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 30A TO3 | CentralCentral Semiconductor Corp 美国中央半导体 |  |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
40V
- 最大电流允许值：
30A
- 最大工作频率：
>2MHZ
- 引脚数：
2
- 可代换的型号：
BDY29,MJ802,2N3771,2N6270,2SD630,2SD797,3DD170A,
- 最大耗散功率：
200W
- 放大倍数：
- 图片代号：
E-44
- vtest：
40
- htest：
2000100
- atest：
30
- wtest：
200
产品属性
- 产品编号：
2N5301
- 制造商：
Microchip Technology
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 描述：
NPN TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TO-3 |
10000 |
全新 |
询价 | ||||
MOTOROLA |
1635+ |
3 |
6000 |
好渠道!好价格!一片起卖! |
询价 | ||
TOS |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
MOTOROLA/摩托罗拉 |
20+ |
原装 |
67500 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
MOTOROLA |
2023+ |
3 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MOTOROLA |
21+ |
3 |
35210 |
一级代理/放心采购 |
询价 | ||
MOT |
2021+ |
CAN |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
MICROSEMI |
1809+ |
SMD |
26 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
