COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件：95.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

文件：196.45 Kbytes 页数：4 Pages

boca

博卡

Power Transistors

Power Transistors TO-66 Case

文件：51.32 Kbytes 页数：1 Pages

Central

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：344.67 Kbytes 页数：2 Pages

Central

Bipolar NPN Device in a Hermetically sealed TO66

文件：15.16 Kbytes 页数：1 Pages

SEME-LAB

Seme LAB

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PNP TRANSISTOR

Microchip

微芯科技