2N4233A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=

2N4233A

isc Silicon NPN Power Transistor

DESCRIPTION •ExcellentSafeOperatingArea •LowCollector-EmitterSaturationVoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation. APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications

2N4233A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=

2N4233A

Bipolar NPN Device in a Hermetically sealed TO66

2N4233A

COMPLEMENTARY SILICON POWER TRANSISTORS

2N4233A

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PNP TRANSISTOR