Power Transistors

Power Transistors TO-66 Case

文件：51.32 Kbytes 页数：1 Pages

Central

Power Transistors

Power Transistors

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ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

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SEME-LAB

Seme LAB

Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) TO-66 Sleeve

NJS

Bipolar Junction Transistors

TT Electronics

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

Microchip

微芯科技

Bipolar NPN Device in a Hermetically sealed TO66

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 5A

文件：15.16 Kbytes 页数：1 Pages

SEME-LAB

Seme LAB

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications

文件：263.83 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件：95.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件：95.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司