POWER TRANSISTORS(5A,75W)

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

文件：189.54 Kbytes 页数：4 Pages

MOSPEC

统懋

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications

文件：263.83 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件：95.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件：95.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO66

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 5A

文件：15.16 Kbytes 页数：1 Pages

SEME-LAB

Seme LAB

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

文件：196.45 Kbytes 页数：4 Pages

boca

博卡

Power Transistors

Power Transistors TO-66 Case

文件：51.32 Kbytes 页数：1 Pages

Central

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：344.67 Kbytes 页数：2 Pages

Central

Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Central

三极管

Mospec

统懋