COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

文件：196.45 Kbytes 页数：4 Pages

boca

博卡

Bipolar NPN Device in a Hermetically sealed TO66

文件：15.16 Kbytes 页数：1 Pages

SEME-LAB

Seme LAB

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：344.67 Kbytes 页数：2 Pages

Central

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：344.67 Kbytes 页数：2 Pages

Central

75W NPN Medium Power BJT Transistor

This BJT is packaged in TO-66 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron

三极管

Mospec

统懋