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2N3716

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.

文件:493.35 Kbytes 页数:2 Pages

CENTRAL

2N3716

EPITAXIAL-BASE NPN - PNP

EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.

文件:178.5 Kbytes 页数:5 Pages

COMSET

2N3716

Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 50-150@IC= 1A • Wide Area of Safe Operation • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A • Complement to Type 2N3791/3792 APPLICATIONS • Designed for medium-speed switching and amplifier applications

文件:132.4 Kbytes 页数:3 Pages

ISC

无锡固电

2N3716

isc Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 50-150@IC= 1A • Wide Area of Safe Operation • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A • Complement to Type 2N3791/3792 APPLICATIONS • Designed for medium-speed switching and amplifier applications

文件:42.07 Kbytes 页数:2 Pages

ISC

无锡固电

2N3716

NPN SILICON POWER TRANSISTORS

NPN silicon power transistors for medium - speed switching and amplifier applications. Complement to PNP type 2N3789 thru 2N3792.

文件:140.53 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N3716

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS

文件:132.23 Kbytes 页数:3 Pages

BOCA

博卡

2N3716

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package APPLICATIONS • They are intended for use in power linear and switching applications

文件:110.16 Kbytes 页数:3 Pages

SAVANTIC

2N3719

Silicon PNP Power Transistors

DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use

文件:55.77 Kbytes 页数:3 Pages

MICROSEMI

美高森美

2N3719

Small Signal Transistors

Small Signal Transistors TO-39 Case

文件:22.37 Kbytes 页数:1 Pages

CENTRAL

2N3719

POWER TRANSISTORS PNP SILICON

3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS

文件:153.1 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

晶体管资料

  • 型号:

    2N3700

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    通用型 (Uni)

  • 封装形式:

    直插封装

  • 极限工作电压:

    140V

  • 最大电流允许值:

    1A

  • 最大工作频率:

    200MHZ

  • 引脚数:

    3

  • 可代换的型号:

    BSS43,BSS59,BSW68,2SC3228,2SC2383,2N2990,3DK204C,

  • 最大耗散功率:

    0.5W

  • 放大倍数:

    β>100

  • 图片代号:

    D-8

  • vtest:

    140

  • htest:

    200000000

  • atest:

    1

  • wtest:

    0.5

产品属性

  • 产品编号:

    2N3700

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    剪切带(CT)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 50mA,500mA

  • 电流 - 集电极截止(最大值):

    10nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 150mA,10V

  • 频率 - 跃迁:

    100MHz

  • 工作温度:

    -65°C ~ 200°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-206AA,TO-18-3 金属罐

  • 供应商器件封装:

    TO-18

  • 描述:

    TRANS NPN 80V 1A TO18

供应商型号品牌批号封装库存备注价格
STMICRO
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
MICRO
24+
2700
询价
800
正品原装--自家现货-实单可谈
询价
ST
24+
CAN3
20000
原装现货假一罚十
询价
MOTO
23+
CAN3
5000
原装正品,假一罚十
询价
MOT
24+
CAN3
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ST
25+
TO-18
2987
只售原装自家现货!诚信经营!欢迎来电
询价
Motorola
23+
NA
1053
专做原装正品,假一罚百!
询价
MOTOROLA/摩托罗拉
专业铁帽
CAN3
22000
原装铁帽专营,代理渠道量大可订货
询价
ST
343
CAN3PIN
462
特价销售欢迎来电!!
询价
更多2N37供应商 更新时间2026-3-11 13:44:00