| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Silicon NPN Power Transistor DESCRIPTION ◇Excellent Safe Operating Area ◇DC Current Gain-hFE=20-70@IC = 4A ◇Collector-Emitter Saturation Voltage-: VCE(sat)= 1.1 V(Max)@ IC = 4A ◇Complement to Type 2N2955 APPLICATIONS ◇Designed for general-purpose switching and amplifierapplications 文件：872.36 Kbytes 页数：2 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
NPN Transistor Bare Die Features Collector current up to 15A High DC Current Gain, hFE = 20-70 @ IC = 4A Low VCE(sat) = 1.1V Max @ IC = 4A Solderable back metal High Reliability tested grades for Military + Space 文件：230.49 Kbytes 页数：2 Pages | SS | SS | ||
SILICON NPN POWER TRANSISTOR Bipolar NPN Device. VCEO = 100V IC = 15A 文件：460.93 Kbytes 页数：3 Pages | TTELEC | TTELEC | ||
Complementary Silicon power transistors DESCRIPTION The 2N3055 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits, and shunt regulators, output stages and amplifiers. series fidelity amplifiers The complementary PNP type is MJ2955. FEATURES Design 文件：225.47 Kbytes 页数：4 Pages | NELLSEMI 尼尔半导体 | NELLSEMI | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 文件：85.41 Kbytes 页数：3 Pages | SYC | SYC | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi 文件：47.01 Kbytes 页数：4 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier 文件：151.46 Kbytes 页数：4 Pages | SAVANTIC | SAVANTIC | ||
NPN SILICON PHOTO TRANSISTOR NPN SILICON POWER TRANSISTOR 文件：124.46 Kbytes 页数：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplif 文件：242.87 Kbytes 页数：4 Pages | JMNIC 锦美电子 | JMNIC | ||
Transistor NPN, TO-3 Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications 文件：404.66 Kbytes 页数：4 Pages | MULTICOMP 易络盟 | MULTICOMP |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
F-Thy
- 性质：
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
0.5A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BRX44BRX51,TAG60A,TAG62A,TAG64A,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
C-78
- vtest：
100
- htest：
999900
- atest：
0.5
- wtest：
0
详细参数
- 型号：
2N30
- 制造商：
Microsemi Corporation
- 功能描述：
THYRISTOR SCR 100V 8A 3PIN TO-18 - Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
CAN |
7000 |
询价 | ||||
MOT |
24+ |
CAN3 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
MOTOROLA |
专业铁帽 |
CAN3 |
100 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
MOT |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
询价 | ||
MOT |
2023+ |
CAN |
50000 |
全新原装现货 |
询价 | ||
MOTOROLA |
24+ |
CAN3 |
1200 |
原装现货假一罚十 |
询价 | ||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
25+ |
CAN to-39 |
16900 |
原装，请咨询 |
询价 | ||
ST |
2511 |
CAN to-39 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 |
