Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

文件：404.66 Kbytes 页数：4 Pages

MULTICOMP

易络盟

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi

文件：47.01 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS

文件：200.74 Kbytes 页数：4 Pages

BOCA

博卡

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

文件：235.85 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER TRANSISTORS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

文件：235.85 Kbytes 页数：6 Pages

ONSEMI

安森美半导体