TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

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DCCOM

道全

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

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ETCList of Unclassifed Manufacturers

未分类制造商

Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

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MULTICOMP

易络盟

POWER LINEAR AND SWITCHING APPLICATIONS

The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. Designed for general purpose, moderate speed, switching and amplifier applications Compliance to RoHS.

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COMSET

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications.

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CENTRAL

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

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MOTOROLA

摩托罗拉

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. 1. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc 2. Collector–Emitter Saturation Voltage — VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

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MOTOROLA

摩托罗拉

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device. VCEO = 100V IC = 15A

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SEME-LAB

NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES

NPN Transistor for Powerful AF Output Stage 2 N 3055 is a single diffused NPN silicon transistor in TO 3 case (3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for use in powerful AF output stages and in stabilized power supply units.

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SIEMENS

西门子

Silicon NPN Power Transistor

DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications

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TGS