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2N2907

GENERAL PURPOSE AMPLIFIERS TRANSISTORS

GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS

文件:150.36 Kbytes 页数:3 Pages

COMSET

2N2907

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manu

文件:250.45 Kbytes 页数:3 Pages

SEMTECH_ELEC

先之科半导体

2N2907

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

文件:233.7 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

2N2907

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application. 2N2905 approved to CECC 50002-102, 2N2907 approved to

文件:63.39 Kbytes 页数:5 Pages

STMICROELECTRONICS

意法半导体

2N2907

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be

文件:32.38 Kbytes 页数:2 Pages

DGNJDZ

南晶电子

2N2907

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low Leakage current, Low collector saturation voltage. Applications General amplifier.

文件:1.27345 Mbytes 页数:6 Pages

FOSHAN

蓝箭电子

2N2907

Surface Mount Quad PNP Transistor

Description: The 2N6987U (TX, TXV) is a hermeƟcally sealed, ceramic surface‐mount device, consisƟng of 4 silicon PNP transistors. The 20 pin ceramic package is ideal for designs where board space and device weight are important design consideraƟons. Features: • Ceramic 20 pin surface mount

文件:224.67 Kbytes 页数:4 Pages

TTELEC

2N2907

PNP SILICON PLANAR TRANSISTORS

文件:41.15 Kbytes 页数:2 Pages

SIEMENS

西门子

2N2907

Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

文件:11.21 Kbytes 页数:1 Pages

SEME-LAB

2N2907

Medium Current General Purpose Amplifiers and Switches

文件:777.48 Kbytes 页数:12 Pages

RAYTHEON

雷神

晶体管资料

  • 型号:

    2N2907

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    通用型 (Uni)

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    0.6A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BC528,BC638,BSW24,BSV47,BSV48,2N3486,3CK9D,

  • 最大耗散功率:

    0.4W

  • 放大倍数:

    β=300

  • 图片代号:

    A-31

  • vtest:

    60

  • htest:

    999900

  • atest:

    0.6

  • wtest:

    0.4

产品属性

  • 产品编号:

    2N2907

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    管件

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1.6V @ 50mA,500mA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 150mA,10V

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-206AA,TO-18-3 金属罐

  • 供应商器件封装:

    TO-18

  • 描述:

    TRANS PNP 40V 0.6A TO18

供应商型号品牌批号封装库存备注价格
FSC
14+无铅
TO-92
25700
优势产品,博盛微热卖!!!
询价
PHI
2021+
TO-18
6800
原厂原装,欢迎咨询
询价
onsemi
25+
TO-18
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
24+
9146
询价
PH
24+
CAN3
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
STM
16+
NA
8800
原装现货,货真价优
询价
ME
24+/25+
69
原装正品现货库存价优
询价
ON
24+
SOT23
1068
原装现货假一罚十
询价
NA
24+
CAN3
5000
只做原装公司现货
询价
??
25+
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多2N2907供应商 更新时间2026-1-29 15:01:00