Diode TP-39

Diode TP-39

文件：153.16 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Quality Semi-Conductors

Power Transistors

文件：98.72 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SWITCHES AND UNIVERSAL AMPLIFIERS

DESCRIPTION The 2N1613 and2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

文件：61.55 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

EPITAXIAL PLANAR NPN

DESCRIPTION The 2N1613 and2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

文件：49.57 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

SILICON PLANAR NPN BIPOLAR TRANSISTOR

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 50V IC = 0.5A

文件：720.25 Kbytes 页数：3 Pages

TTELEC

Bipolar NPN Device in a Hermetically sealed TO39

文件：15.36 Kbytes 页数：1 Pages

SEME-LAB

NPN LOW POWER SILICON TRANSISTOR

文件：59.49 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SILICON PLANAR EPITAXIAL TRANSISTORS

文件：84.91 Kbytes 页数：3 Pages

COMSET

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN Silicon Low-Power 30V to 60V, 0.5A

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.The device packages for the encapsulated device types are a

Microchip

微芯科技