ESD05V32DS-C

Marking：2B；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 255~410WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsonebidirectionalI/Olineorpowerline LowClampingVoltage WorkingVoltages:3.3V~48V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30kV

MA729

Marking：2B；Package：SOD-323；Surface Mount Schottky Barrier Diodes

SurfaceMountSchottkyBarrierDiodes Features •LowForwardVoltage

MM3Z10

Marking：2B；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

NHUMB11

Marking：2B；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: NPN/PNP complement: NHUMB111010NHUM

NHUMB11

Marking：2B；Package：SOT363；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

PDTC123TE

Marking：2B；Package：SC-75；NPN resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PESD2ETHX-Q

Marking：2B；Package：SOT143B；Ultra low capacitance double rail-to-rail ESD protection diode

1.Generaldescription Ultralowcapacitancedoublerail-to-railElectroStaticDischarge(ESD)protectiondiodeinasmall SOT143BSurface-MountedDevice(SMD)plasticpackage. Thedeviceisdesignedtoprotecttwohigh-speeddatalinesorhigh-frequencysignallinesfromthe damagecausedby

PESD5V0S1BA

Marking：2B；Package：SOD-323；1-Line Bl-directional TVS Diode

Features *300Wpeakpulsepower(8/20us) *Protectsonedataorpowerline *Ultralowleakage:nAlevel *Operatingvoltage:5V *Ultralowclampingvoltage *Complieswithfollowingstandards: ~IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV/ Contactdischarge:+30kV —IEC61000

PMBT2907

Marking：2B；Package：SOT23；40V, 600 mA, PNP switching transistor

1.Generaldescription PNPswitchingtransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. NPNcomplement:PMBT2222 60Vvariant:PMBT2907A 2.Featuresandbenefits •Singlegeneral-purposeswitchingtransistor •AEC-Q101qualified 3.Applications •Switching

PMDPB70XPE

Marking：2B；Package：SOT1118；20 V dual P-channel Trench MOSFET

1.1Generaldescription Dualsmall-signalP-channelenhancementmodeField-EffectTransistor(FET)ina leadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plastic packageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching TrenchMOSFETtechn