GLZ2.2B

Marking：2B2；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

SMF2Z17A

Marking：2B2；Package：SOD-123FL；ZENER DIODE

Features Glasspassivatedchip Built-instrainrelief Lowinductance Highpeakreversepowerdissipation Lowreverseleakage Foruseinstabilizingandclippingwith highpowerrating RoHScompliant

TAR5SB22

Marking：2B2；Package：SSOP5-P-0.95；Point Regulators (Low-Dropout Regulator)

Features •Lowstand-bycurrent •Overtemperature/overcurrentprotection •Operationvoltagerangeiswide. •Maximumoutputcurrentishigh. •Differencebetweeninputvoltageandoutputvoltageislow. •Smallpackage.(SOT-235pin) •Ceramiccapacitorscanbeused.

SMB2EZ17D5

Marking：2B2；Package：SMB；Surface Mount Zener Diodes

OPA2387DGKR

Marking：2B2T；Package：VSSOP；OPAx387 Ultra-High Precision, Zero-Drift, Low-Input-Bias-Current Op Amps

1Features •Ultra-lowoffsetvoltage:±2μV(maximum,tested) •Zerodrift:±0.003μV/°C •Low-inputbiascurrent:150pA(maximum,tested) •Lownoise:8.5nV√Hzat1kHz •No1/fnoise:177nVPP(0.1Hzto10Hz) •Common-modeinputrange±100mVbeyond supplyrails •Gainbandwidth:5.

OPA2387DGKT

Marking：2B2T；Package：VSSOP；OPAx387 Ultra-High Precision, Zero-Drift, Low-Input-Bias-Current Op Amps

1Features •Ultra-lowoffsetvoltage:±2μV(maximum,tested) •Zerodrift:±0.003μV/°C •Low-inputbiascurrent:150pA(maximum,tested) •Lownoise:8.5nV√Hzat1kHz •No1/fnoise:177nVPP(0.1Hzto10Hz) •Common-modeinputrange±100mVbeyond supplyrails •Gainbandwidth:5.

OPA2387DGKR

Marking：2B2T；Package：VSSOP；OPAx387 Ultra-High Precision, Zero-Drift, Low-Input-Bias-Current Op Amps

OPA2387DGKR

Marking：2B2T；Package：VSSOP；OPAx387 Ultra-High Precision, Zero-Drift, Low-Input-Bias-Current Op Amps

OPA2387DGKR

Marking：2B2T；Package：VSSOP；OPAx387 Ultra-High Precision, Zero-Drift, Low-Input-Bias-Current Op Amps

OPA2387DGKR

Marking：2B2T；Package：VSSOP；OPA2387 Ultra-High Precision, Zero-Drift, Low-Input-Bias-Current Op Amps