BC849S-B

丝印：2B；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

BC849S-C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

BC849T

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

BC849W

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PHI

BC856ALT1G

ON
TO-23

ON