丝印：25P；Package：SOT-23；PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE

文件：54.07 Kbytes 页数：4 Pages

Zetex

丝印：25P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The 25P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：506.24 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：25P03L；Package：TO-252；P-Channel -30V (D-S) MOSFET

PRODUCT SUMMARY VDS (V) = -30V RDS(ON)

文件：408.79 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：25P150；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

General Features Vps =-150V,Ip =-25A Rd(on)

文件：647.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P06Q；Package：PDFN3X3；P-Channel Enhancement Mosfet

Feature -60V,25A Rds (on)

文件：592.99 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P06Q；Package：PDFN3X3；P-Channel Enhancement Mosfet

Feature 60V-25A Rds(on)

文件：692.38 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P60；Package：TO-252；P-Channel Power MOSFET

General Features Vps =-60V,Ip =-25A Rds(on)

文件：1.14507 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P60；Package：TO-252；P-Channel Power MOSFET

General Features Vps =-60V,Ip =-25A Rds(on)

文件：1.45375 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25PC；Package：SOT-23；REF4132-Q1 Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

文件：1.33946 Mbytes 页数：24 Pages

TI

德州仪器

丝印：25P30；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

文件：238.25 Kbytes 页数：7 Pages

RECTRON

丽正国际