丝印：259481L；Package：DSBGA；TPS25948xx 3.5-V–23-V, 12.2-mΩ, 8-A eFuse With Bi-directional Power Delivery

1 Features • Wide operating input voltage range: 3.5 V to 23 V – 28-V absolute maximum – Can be powered from either IN or OUT • Integrated back-to-back FETs with low Onresistance: RON = 12.2 mΩ (typ.) • Ideal diode operation with true reverse current blocking (RCB) – External pin control (

文件：4.48705 Mbytes 页数：56 Pages

TI

德州仪器

丝印：259482A；Package：DSBGA；TPS25948xx 3.5-V–23-V, 12.2-mΩ, 8-A eFuse With Bi-directional Power Delivery

1 Features • Wide operating input voltage range: 3.5 V to 23 V – 28-V absolute maximum – Can be powered from either IN or OUT • Integrated back-to-back FETs with low Onresistance: RON = 12.2 mΩ (typ.) • Ideal diode operation with true reverse current blocking (RCB) – External pin control (

文件：4.48705 Mbytes 页数：56 Pages

TI

德州仪器

丝印：259482L；Package：DSBGA；TPS25948xx 3.5-V–23-V, 12.2-mΩ, 8-A eFuse With Bi-directional Power Delivery

1 Features • Wide operating input voltage range: 3.5 V to 23 V – 28-V absolute maximum – Can be powered from either IN or OUT • Integrated back-to-back FETs with low Onresistance: RON = 12.2 mΩ (typ.) • Ideal diode operation with true reverse current blocking (RCB) – External pin control (

文件：4.48705 Mbytes 页数：56 Pages

TI

德州仪器

丝印：259B；Zener Diodes

文件：298.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：259B；Zener Diodes

文件：298.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：2596DT-12；Package：TO-263-5；OPERATION INSTRUCTION

文件：1.23138 Mbytes 页数：15 Pages

COREBAI

芯佰微

丝印：2596DT-3.3；Package：TO-263-5；OPERATION INSTRUCTION

文件：1.23138 Mbytes 页数：15 Pages

COREBAI

芯佰微

丝印：2596DT-5.0；Package：TO-263-5；OPERATION INSTRUCTION

文件：1.23138 Mbytes 页数：15 Pages

COREBAI

芯佰微

丝印：2596DT-ADJ；Package：TO-263-5；OPERATION INSTRUCTION

文件：1.23138 Mbytes 页数：15 Pages

COREBAI

芯佰微

丝印：2596T-12；Package：TO-220；OPERATION INSTRUCTION

文件：1.23138 Mbytes 页数：15 Pages

COREBAI

芯佰微