5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 11 Circuits, Tin (Sn) Plating

文件：241.55 Kbytes 页数：4 Pages

Molex

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KK짰 Header, Vertical, with Polarizing Backwall, 11 Circuits, Tin (Sn) Plating

文件：50.02 Kbytes 页数：2 Pages

Molex

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5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 11 Circuits, Gold (Au) Plating

文件：241.1 Kbytes 页数：4 Pages

Molex

莫仕

5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 12 Circuits, Tin (Sn) Plating

文件：241.55 Kbytes 页数：4 Pages

Molex

莫仕

KK짰 Header, Vertical, with Polarizing Backwall, 12 Circuits, Tin (Sn) Plating

文件：50.02 Kbytes 页数：2 Pages

Molex

莫仕

5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 12 Circuits, Gold (Au) Plating

文件：241.1 Kbytes 页数：4 Pages

Molex

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Aluminum Electrolytic Capacitors Power High Ripple Current Miniaturized Snap-In

文件：118.93 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：259480A；Package：DSBGA；TPS25948xx 3.5-V–23-V, 12.2-mΩ, 8-A eFuse With Bi-directional Power Delivery

1 Features • Wide operating input voltage range: 3.5 V to 23 V – 28-V absolute maximum – Can be powered from either IN or OUT • Integrated back-to-back FETs with low Onresistance: RON = 12.2 mΩ (typ.) • Ideal diode operation with true reverse current blocking (RCB) – External pin control (

文件：4.48705 Mbytes 页数：56 Pages

TI

德州仪器

丝印：259480L；Package：DSBGA；TPS25948xx 3.5-V–23-V, 12.2-mΩ, 8-A eFuse With Bi-directional Power Delivery

1 Features • Wide operating input voltage range: 3.5 V to 23 V – 28-V absolute maximum – Can be powered from either IN or OUT • Integrated back-to-back FETs with low Onresistance: RON = 12.2 mΩ (typ.) • Ideal diode operation with true reverse current blocking (RCB) – External pin control (

文件：4.48705 Mbytes 页数：56 Pages

TI

德州仪器

丝印：259481A；Package：DSBGA；TPS25948xx 3.5-V–23-V, 12.2-mΩ, 8-A eFuse With Bi-directional Power Delivery

1 Features • Wide operating input voltage range: 3.5 V to 23 V – 28-V absolute maximum – Can be powered from either IN or OUT • Integrated back-to-back FETs with low Onresistance: RON = 12.2 mΩ (typ.) • Ideal diode operation with true reverse current blocking (RCB) – External pin control (

文件：4.48705 Mbytes 页数：56 Pages

TI

德州仪器