丝印：25211；Package：DSBGA；CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

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