丝印：23N06；Package：TO-252；SUD23N06

FEATURES VDS (V) = 60V ID= 30A (VGS=10V) RDS(ON) 25m (VGS =10V) RDS(ON) 30m (VGS = 4.5V)

文件：448.85 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：23N06；Package：TO-252；SUD23N06

FEATURES VDS (V) = 60V ID= 30A (VGS=10V) RDS(ON) 25m (VGS =10V) RDS(ON) 30m (VGS = 4.5V)

文件：448.85 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：23N06；Package：TO-252；MOSFET

FEATURES VDS (V) = 60V ID= 30A (VGS=10V) RDS(ON)

文件：464.37 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic level drive type • Des

文件：226.04 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 65mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.78 Kbytes 页数：2 Pages

ISC

无锡固电