丝印：21N650；Package：TO-263；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower driving requirements. 100% Avalanche Tested ROHS compliant

文件：657.27 Kbytes 页数：10 Pages

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丽正国际

丝印：21N650；Package：TO-220；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower driving requirements. 100% Avalanche Tested ROHS compliant

文件：657.27 Kbytes 页数：10 Pages

RECTRON

丽正国际

丝印：21N650；Package：TO-220；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device. Low on-resistance and low conduction losses Small package. Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested OHS compliant

文件：1.27845 Mbytes 页数：9 Pages

RECTRON

丽正国际

丝印：21N650；Package：TO-220F；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower driving requirements. 100% Avalanche Tested ROHS compliant

文件：657.27 Kbytes 页数：10 Pages

RECTRON

丽正国际

丝印：21N650；Package：TO-220F；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device. Low on-resistance and low conduction losses Small package. Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested OHS compliant

文件：1.27845 Mbytes 页数：9 Pages

RECTRON

丽正国际

丝印：21N650；Package：TO-220F；N-Channel Super Junction Power MOSFET

文件：1.27873 Mbytes 页数：9 Pages

RECTRON

丽正国际

丝印：21N650；Package：TO-220；N-Channel Super Junction Power MOSFET

文件：1.27873 Mbytes 页数：9 Pages

RECTRON

丽正国际

丝印：21N650；Package：TO-247；N-Channel Super Junction Power MOSFET

文件：593.72 Kbytes 页数：7 Pages

RECTRON

丽正国际