丝印：21N10LF2；Package：PG-TO263-3；MOSFET OptiMOS™ 5 Linear FET 2, 100 V

Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：742.62 Kbytes 页数：12 Pages

Infineon

英飞凌

SIPMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：483.75 Kbytes 页数：8 Pages

Infineon

英飞凌

SIPMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：483.75 Kbytes 页数：8 Pages

Infineon

英飞凌

SIPMOS Power-Transistor

Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：483.75 Kbytes 页数：8 Pages

Infineon

英飞凌