丝印：2188；Package：VSSOP；OPA2188 0.03-μV/°C Drift, Low-Noise, Rail-to-Rail Output, 36-V, Zero-Drift Operational Amplifiers

1 Features 1• Low Offset Voltage: 25 μV (Maximum) • Zerø-Drift: 0.03 μV/°C • Low Noise: 8.8 nV/√Hz 0.1-Hz to 10-Hz Noise: 0.25 μVPP • Excellent DC Precision: PSRR: 142 dB CMRR: 146 dB Open-Loop Gain: 136 dB • Gain Bandwidth: 2 MHz • Quiescent Current: 475 μA (Maximum) • Wide Supply Rang

文件：1.03779 Mbytes 页数：39 Pages

TI

德州仪器

丝印：2188；Package：VSSOP；OPA2188 0.03-μV/°C Drift, Low-Noise, Rail-to-Rail Output, 36-V, Zero-Drift Operational Amplifiers

1 Features 1• Low Offset Voltage: 25 μV (Maximum) • Zerø-Drift: 0.03 μV/°C • Low Noise: 8.8 nV/√Hz 0.1-Hz to 10-Hz Noise: 0.25 μVPP • Excellent DC Precision: PSRR: 142 dB CMRR: 146 dB Open-Loop Gain: 136 dB • Gain Bandwidth: 2 MHz • Quiescent Current: 475 μA (Maximum) • Wide Supply Rang

文件：1.03779 Mbytes 页数：39 Pages

TI

德州仪器

丝印：2188；Package：VSSOP；OPA2188 0.03-μV/°C Drift, Low-Noise, Rail-to-Rail Output, 36-V, Zero-Drift Operational Amplifiers

1 Features 1• Low Offset Voltage: 25 μV (Maximum) • Zerø-Drift: 0.03 μV/°C • Low Noise: 8.8 nV/√Hz 0.1-Hz to 10-Hz Noise: 0.25 μVPP • Excellent DC Precision: PSRR: 142 dB CMRR: 146 dB Open-Loop Gain: 136 dB • Gain Bandwidth: 2 MHz • Quiescent Current: 475 μA (Maximum) • Wide Supply Rang

文件：1.03779 Mbytes 页数：39 Pages

TI

德州仪器

丝印：2183；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : Vbat = 2.9 to 3.2 V (3.0 V TYP.) • Standby mode voltage : VDD (H) = 1.7 to Vbat V (2.65 V TYP.) : VDD (L) = 0 to +0.05 V (0 V TYP.) • Switch control voltage : Vcont (H) = 1.7 to Vbat V (2.65 V TYP.) : Vcont (L) = 0 to +0.05 V (0 V TYP.) • Operating Frequency : f =

文件：450.1 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：2183；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : Vbat = 2.9 to 3.2 V (3.0 V TYP.) • Standby mode voltage : VDD (H) = 1.7 to Vbat V (2.65 V TYP.) : VDD (L) = 0 to +0.05 V (0 V TYP.) • Switch control voltage : Vcont (H) = 1.7 to Vbat V (2.65 V TYP.) : Vcont (L) = 0 to +0.05 V (0 V TYP.) • Operating Frequency : f =

文件：450.1 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：2180；Package：PDFN3x3-8L；Dual N-Channel, 20V, 11A, Power MOSFET

文件：3.05829 Mbytes 页数：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：2180；Package：PDFN3x3-8L；Dual N-Channel, 20V, 11A, Power MOSFET

文件：3.05829 Mbytes 页数：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：2182；Package：PDFN2.9x2.8-8L；Dual N-Channel, 20V, 9.5A, Power MOSFET

文件：1.82965 Mbytes 页数：7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：2182；Package：PDFN2.9x2.8-8L；Dual N-Channel, 20V, 9.5A, Power MOSFET

文件：1.82965 Mbytes 页数：7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：2186；Package：DFN5x2-6L；Dual N-Channel, 20V, 12A, Power MOSFET

文件：680.15 Kbytes 页数：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司