N-Channel TrenchPowerMOSFET

General Description The 2060K.uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications. Features ● VDS=20V；ID=60A； RDS(ON)

文件：646.88 Kbytes 页数：6 Pages

SUPERCHIP

富满微

无源晶振

HKC

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

文件：87.82 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

文件：84.05 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

文件：84.05 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉