丝印：200E008C；Package：CFP15B；200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A (per diode) • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond techno

文件：923.83 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：200E008C；Package：CFP15B；200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A (per diode) • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond techno

文件：263.27 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司