丝印：200E008C；Package：CFP15B；200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A (per diode) • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond techno

文件：923.83 Kbytes 页数：13 Pages

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Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

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Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes 页数：234 Pages

NEXPERIA

安世

丝印：200E008C；Package：CFP15B；200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A (per diode) • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond techno

文件：263.27 Kbytes 页数：13 Pages

NEXPERIA

安世

200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A (per diode) • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond techno

文件：263.27 Kbytes 页数：13 Pages

NEXPERIA

安世

200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A (per diode) • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond techno

文件：923.83 Kbytes 页数：13 Pages

NEXPERIA

安世

200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

High power density, hyperfast switching time dual recovery rectifier in common cathode configuration with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. • Reverse voltage: VR ≤ 200 V\n• Forward current: IF ≤ 4 A (per diode)\n• Switching time: trr ≤ 30 ns\n• Pt doped life time control\n• Low inductance\n• Power and flat lead SMD plastic package\n• Package height typical 0.95 mm\n• High power capability due to clip-bond technology\n• Planar die design;

Nexperia

安世

200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier

High power density, hyperfast switching time dual recovery rectifier in common cathode configuration with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. • Reverse voltage: VR ≤ 200 V\n• Forward current: IF ≤ 4 A (per diode)\n• Switching time: trr ≤ 30 ns\n• Pt doped life time control\n• Low inductance\n• Power and flat lead SMD plastic package\n• Package height typical 0.95 mm\n• High power capability due to clip-bond technology\n• Planar die design;

Nexperia

安世

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：HYPERFAST/ULTRAFAST RECOVERY REC

Nexperia USA Inc.

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：PNE20080CPE/SOT1289B/CFP15

Nexperia USA Inc.