丝印：1T；Package：SC-79；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：221.41 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：1T；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：222.33 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：1T；Package：DFN2020-6；40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic packag

文件：1.44438 Mbytes 页数：20 Pages

NEXPERIA

安世

丝印：1T；Package：SC-75；40 V, 500 mA PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：286.89 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：1T；Package：SC-70；NPN resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

文件：585.57 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：1T；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features * Built-in bias resistors * Simplifies circuit design *500 mA output current capability * Reduces component count * Reduces pick and place costs

文件：243.15 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：1T；Package：SOD962-2；Extremely low capacitance bidirectional ESD protection diode

1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package, designed to protect one signal line from

文件：218.41 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：1T；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor

文件：1.12291 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：1T；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor

文件：156.87 Kbytes 页数：2 Pages

BILIN

银河微电

丝印：1T；Package：WCSP6E；Load Switch IC with Over current limited function

The TCK22xxxG, TCK2065G and TCK1024G are Load Switch ICs for power management with Over Current Limited function featuring low switch on resistance, ultra low quiescent current, high output current and wide input voltage range. Typical switch ON resistance is only 31 mΩ at VIN = 5.0 V, IOUT = -0.1

文件：696.52 Kbytes 页数：13 Pages

TOSHIBA

东芝