SILICON SWITCHING DIODES

HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES • Low capacitance: Ct= 2.5 pF TYP. • High speed switching: trr= 4.0 ns MAX. • Wide applications including switching, limitter, clipper. • Double diode configuration assures economical use.

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NEC

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丝印：A4；SILICON SWITCHING DIODE

HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES • Low capacitance: Ct = 2.5 pF TYP. • High speed switching: trr = 4.0 ns MAX. • Wide applications including switching, limitter, clipper. • Double diode configuration assures economical use.

文件：220.14 Kbytes 页数：6 Pages

RENESAS

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HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE

Features ● Low capacitance: Ct = 2.5 pF TYP. ● High speed switching: trr = 4.0 ns MAX. ● Wide applications including switching, limitter, clipper. ● Double diode configuration assures economical use.

文件：45.8 Kbytes 页数：1 Pages

KEXIN

科信电子

SILICON SWITCHING DIODES

Renesas

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