1SS361F

Ultra High Speed Switching Applications

UltraHighSpeedSwitchingApplications ●Smallpackage:1608Flatlead ●Excellentinforwardcurrentandforwardvoltagecharacteristics:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

1SS361FV

Ultra-High-Speed Switching Applications

Ultra-High-SpeedSwitchingApplications ●Smallpackage ●Excellentinforwardcurrentandforwardvoltagecharacteristics:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

1SS361FV,L3F

包装：散装 封装/外壳：SOT-723 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP 80V 100MA VESM

Toshiba Semiconductor and Storage

1SS361

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATION)

UltraHighSpeedSwitchingApplication ●Smallpackage ●Lowforwardvoltage:VF=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

1SS361

UltraHighSpeedSwitchingApplication

1SS361

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication Smallpackage Lowforwardvoltage:VF(3)=0.9V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.) Smalltotalcapacitance:CT=0.9pF(typ.)

1SS361CT

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication Smallpackage Lowforwardvoltage:VF(3)=0.9V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.) Smalltotalcapacitance:CT=0.9pF(typ.)

1SS361UDJ

DUALSURFACEMOUNTSWITCHINGDIODE

Features •FastSwitchingSpeed •Ultra-SmallSurfaceMountPackage(1.0x0.8mm) •Ultra-LowProfilePackage(0.45mm) •LowForwardVoltage:typof0.62VatIF=1.0mA •FastReverseRecovery:maxof4.0ns •LowCapacitance:maxof3.0pF •LowReverseLeakageCurrent •IdealforBatteryP