1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts

文件：448.02 Kbytes 页数：4 Pages

MCC

SCHOTTKY BARRIER RECTIFIER

文件：27 Kbytes 页数：2 Pages

RECTRON

丽正国际

1.0A Axial Leaded Schottky Barrier Rectifier

文件：344.09 Kbytes 页数：2 Pages

SUNMATE

森美特

SCHOTTKY BARRIER RECTIFIER

文件：58.1 Kbytes 页数：2 Pages

JINANJINGHENG

晶恒集团

肖特基二极管

MCC

美微科

丝印：D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET

文件：2.17231 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：1S30N06L；Package：TO-262AA；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

文件：91.17 Kbytes 页数：6 Pages

HARRIS

丝印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：188.99 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：80.85 Kbytes 页数：8 Pages

INTERSIL

丝印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

文件：91.17 Kbytes 页数：6 Pages

HARRIS